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Abstract
The laser-CVD of silicon oxide films on silicon substrates has been carried out using a CW-CO 2 laser in a parallel configuration, and with SiH 4 and N 2O as precursor gases. In this paper we report the influence of the reactant partial pressures on the film growth rate. The individual apparent orders of the chemical reaction for SiH 4 and N 2O have been determined.
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