Abstract
AbstractBreakdown voltages (VCBO) of AlGaAs/GaAs/GaAs and AlGaAs/GaAs/GaAs‐setback/GaN HBTs have been compared both theoretically and experimentally with respect to setback layer thicknesses and the doping type. VCBO was calculated using a non‐local energy model. The hard breakdown voltage was measured on as‐grown GaAs homojunctions and AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion. The calculation showed an increase of VCBO from ∼ 20 V to ∼ 325 V by replacing the GaAs collector with GaN, and VCBO ∼90 V was indeed measured. The smaller than predicted VCBO is attributed to the large leakage current currently present in the fused junctions. Insertion of a lightly doped GaAs setback layer has resulted in improved current gain of the fused HBTs, but it also degrades the breakdown characteristics. 20‐30 nm setback layers were found to maintain VCBO significantly higher than that of GaAs homojunctions and likely reasonable current gains. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
