Abstract
Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 μm range is much more apparent than that in the 1.3 μm range, which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 μm single-QW were comparable with that of the 1.3 μm QWs.
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