Abstract
The experimental data and the phenomenological models of ion beam induced epitaxial crystallization (IBIEC) do not yet give unambiguous information about the role of point defects in IBIEC. In this work the influence of vacancies and interstitials present at the amorphous/crystalline (a/c) interface is investigated by classical molecular dynamics (MD) simulations using the Stillinger–Weber (SW) potential. The results show that vacancies near the interface always migrate to the interface and cause crystallization while in the case of interstitials the situation is more complex. The results are discussed with respect to the experimental data and the assumptions made in the different phenomenological models.
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