Abstract
A new description of the observed resonant tunneling effect in single barrier III–V structures are presented, based on inelastic or phase-breaking scattering. Near the interfaces in a GaAs/AlAs/GaAs quantum structure there is a substantial spatial overlap between Γ and X states of the GaAs and the AlAs regions, respectively. As a result, the X band in the AlAs barrier layer provides regions of enhanced current-carrying energy states into which Γ band electrons can scatter through phase-breaking scattering. In this description, scattered electrons are reinjected into states belonging either to Γ or X bands at rates determined by respective density of states.
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