Abstract
We have studied the interfacial reactions between amorphous LaAlO3 thin films and Si substrates, using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interfacial layer between LaAlO3 him and Si substrate is SiLaxAlyOx. The depth distributions of La, Si and Al chemical states show that the ratio of La 4d(3/2) to Al 2p of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content in the interfacial layer gradually decreases with increasing thickness of the interfacial layer. These results strongly suggest that the Al element is not deficient in the interfacial layer, as previously believed, and the formation of a SiLaxAlyOz interfacial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interfacial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-h oxides as gate dielectrics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
