Abstract
The role of Ni impurities on the structure of the Si(001)-(2 × 1) surface has been investigated by statistically comparin STM patterns with Auger spectra. Characteristic reconstructed local structures (“split off dimers” and “vacancy channels”) are observed for different surface concentrations of Ni as measured by Auger electron spectroscopy, and it is shown that the STM image provides a high sensitivity to Ni. For high levels of Ni contamination, long range roughening of the Si(001) surface is observed resulting in more than 50 Å corrugation and loss of atomic structure as detected by the STM. Crystal support cleaning procedures and crystal annealing procedures have been devised permitting Si(001) crystals to be repeatedly heated over long time periods without undergoing surface contamination or macroscopic roughening.
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