Abstract
We investigated nanoneedle arrays fabricated on a series of metal-silicon substrates using Ga(+) ion beam patterning. It is shown that the low sputtering rate of the metal is preserved on the tip of each nanoneedle in the form of a gallium alloy nanodot. The generated nanodot was found to greatly alleviate the ion sputtering of the underlying materials. These protective metals are promising materials that act as a shelter for the functional layer, which is vulnerable to ion beam irradiation. In the present work, as an example, we report a bundle of GaAs nanowhiskers that were successfully grown on each gold nanodot protected by an iron-gallium alloy.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
