Abstract
The half‐Heusler (HH)‐based materials are appealing for mid‐high temperature thermoelectric (TE) applications. Herein, the effect of Mn doping on the TE properties of ZrNiSn HH alloy is explored. The samples of ZrNi1−xMnxSn (x = 0.01–0.03) are prepared via the fast‐processing route comprising arc melting along with spark plasma sintering and then characterized for structural as well as TE properties. The Seebeck coefficient at room temperature with Mn doping is realized to be increased as a result of increased carrier effective mass, which might be due to the charge carrier–magnetic moment interaction. The improved power factor of ≈3.8 × 10−3 Wm−1 K−2 at ≈873 K is noticed for the composition ZrNi0.97Mn0.03Sn. The figure of merit is observed to be more or less unaltered with Mn concentration due to the simultaneously increased thermal conductivity.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
