Abstract
Low-energy (≤ 200 eV) ion irradiation during crystal growth from the vapor phase can be used to provide new chemical reaction pathways, modify film-growth kinetics, and, hence, controllably alter the physical properties of films deposited by a variety of techniques. The latter includes sputter deposition, ion plating, plasma-assisted chemical vapor deposition (PA-CVD), primary-ion deposition (PID), and molecular-beam epitaxy (MBE) using accelerated beam sources. Ion/surface interaction effects such as ion-induced chemistry, trapping, recoil implantation, preferential sputtering, collisional mixing, enhanced diffusion, and alteration in segregation behavior are used to interpret and model experimental results concerning the effects of low-energy particle bombardment on nucleation and growth kinetics, elemental incorporation probabilities, compositional depth distributions, and the growth of metastable phases.
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