Abstract
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al2O3/NbxOy/Au memristive device based on numerical simulations in conjunction with experimental measurements. The device consists of an ultra-thin NbxOy solid state electrolyte between an Al2O3 tunnel barrier and a semiconductor metal interface at an Au electrode. It is shown that the device provides a number of interesting features such as an intrinsic current compliance, a relatively long retention time, and no need for an initialization step. Therefore, it is particularly attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. However, the underlying physical mechanisms of the resistive switching are still not completely understood yet. To investigate the interplay between the current transport mechanisms and the inner atomistic device structure a lumped element circuit model is consistently coupled with 3D kinetic Monte Carlo model for the ion transport. The simulation results indicate that the drift of charged point defects within the NbxOy is the key factor for the resistive switching behavior. It is shown in detail that the diffusion of oxygen modifies the local electronic interface states resulting in a change of the interface properties.
Highlights
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al2O3/NbxOy/Au memristive device based on numerical simulations in conjunction with experimental measurements
We report on numerical simulations of a quantum mechanical double barrier memristive device
The device consists of an Al/Al2O3/NbxOy/Au structure where the NbxOy solid state electrolyte is enclosed by a tunnel barrier and a Schottky contact
Summary
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al2O3/NbxOy/Au memristive device based on numerical simulations in conjunction with experimental measurements. It is shown that the device provides a number of interesting features such as an intrinsic current compliance, a relatively long retention time, and no need for an initialization step It is attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. Memristive (or synonymously resistive switching) devices have been identified as promising candidates for future non-volatile memory applications due to their distinct key features which are i) low power consumption, ii) passivity, and iii) scalability into the nanometer scale[3]. Hansen et al presented a memristive device consisting of both, a tunnel barrier and a Schottky contact which embed a thin solid state electrolyte[12] This device provides specific features such as a highly uniform current distribution, an intrinsic current compliance, an improved retention time, and no need for an initial electroforming procedure. The comparison of the simulation results with experimental findings shows excellent agreement
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