Abstract
The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p+-n-n+ sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p+-n-n+ device where space charge screening effects (SCSE) result in transient shape being dependent on ion track structure. The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors.
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