Abstract
Amorphous silicon nitride and silicon oxynitride films were deposited by reactive r.f. sputtering. Hydrogen-containing films were prepared by adding hydrogen to the sputter gas and by implanting 10 keV hydrogen ions into the films. The effects of adding hydrogen and/or oxygen on the properties of silicon (oxy)-nitride films were studied by means of optical and IR transmission spectroscopy and investigations of the refractive index. The results for hydrogen-free and hydrogen-containing films prepared by reactive sputtering were compared with those reported for chemically vapour-deposited films.
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