Abstract
The effect of microstructure on the electromigration performance of aluminum-based metallizations in integrated circuits has been extensively investigated over the past three decades. Besides grain size, grain size distribution and precipitate morphology, crystallographic texture has been documented to have a major impact on the electromigration (EM) lifetime. The authors present here, for the first time, a direct relation between the aluminum microtexture and EM-induced drift velocities, both for different alloys (pure Al vs Al(Cu)) and different metallization technologies (reactive ion etching or RIE vs. damascene).
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