Abstract
Ba0.30GaxCo4Sb12+x (x = 0–0.30) skutterudite compounds were synthesized using a melt–quench–anneal–SPS method and the effect of the content of Ga on the structure and thermoelectric properties was investigated. In samples with Ga content x ≤ 0.15, Ga enters the skutterudite voids and its presence seems to stimulate a more homogeneous distribution of the filler species. Samples with Ga content x ≥ 0.20 possess uniformly dispersed nanoinclusions consisting of circular domains of GaSb with a diameter of 20 nm. As the content of Ga increases, the carrier concentration decreases, the Seebeck coefficient increases, and the heat transport is progressively more impeded. The thermoelectric figure of merit of Ba0.30GaxCo4Sb12+x is strongly enhanced in comparison to that of Ba0.30Co4Sb12 and reaches values in excess of 1.35 at 850 K for Ba0.30Ga0.30Co4Sb12.30, approximately twice the value of the Ba0.30Co4Sb12 sample.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
