Abstract
We have investigated the effect of ion channeling flux-focusing on the origin of high near-surface shoulders in channeling angular scans of single crystals. We simulate 2 MeV He ion planar channeling in Si{100} and analyze the variation of ion flux distribution within the channel with respect to the angle of incidence. It is observed that at the angle of incidence corresponding to the channeling shoulder, the primary channeling focus overlaps with lattice atoms and dramatically enhances the ion flux density at atomic sites, increasing the ion–atom close encounter probability. We show that the so increased close encounter probability originates high near-surface shoulders in channeling.
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