The role of even longitudinal electric field distribution in optimizing carrier transport efficiency of field-effect transistors

Abstract

Longitudinal electric field (EL) optimization is a frequent method to enhance the carrier transport efficiency of semiconductor devices including field-effect transistors (FETs). However, conducting a thorough investigation to establish the optimal EL distribution remains a challenge. This work proves that an even EL distribution is the best case by developing a physical model and investigating the impact of the EL distribution on carrier transport efficiency. The use of multi-material gate architecture can generate a quasi-even EL distribution while also increasing transconductance by 21.9% and increasing saturation current by 19%. More importantly, the multi-material gate would provide for acceptable tolerance of short-channel effects as well as a chance to approach the saturation current limit, highlighting the importance of an even EL distribution.