Abstract
We have experimentally analysed the use of epitaxial and polycrystalline tantalum trapping layers in tunnel junction detectors, using epitaxial niobium based double tunnel junction devices. We have shown that the trapping rate is enhanced by having a low mean-free-path in the Ta trap film and an epitaxial Nb absorber film. This effectively increases the proportion of time spent by a quasiparticle in the trap film. Phonon-quasiparticle scattering, which reduces the effective trapping rate, has been observed.
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