Abstract
The dissociation of FeB pairs in p‐type silicon under injection is often explained by the charge state change of interstitial Fe (Fei) from positive to neutral. It is also sometimes interpreted as a recombination‐enhanced defect reaction (REDR) mechanism. The charge effect and the REDR have fundamentally different impacts on the dissociation/association reactions: the former changes the concentration of Fei+, whereas the latter changes the reaction rate constants. Herein, the two effects are investigated and compared through measuring and analyzing the dynamics of the reactions. The results confirm that the dissociation of FeB under carrier injection cannot be purely attributed to the change of charge states. The extracted dissociation/association rate constant ratio shows an approximately linear dependence on the recombination rate on each FeB pair, indicating the REDR effect. The results allow the two effects to be directly compared, highlighting the dominant role of the REDR effect in dissociating the pairs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
