Abstract
ZnO doped with non-magnetic C has been reported to exhibit room-temperature ferromagnetism (RTF). The theoretical explanations of the RTF in ZnO:C are based on the incorporation of C at the O site and on the p-p exchange interaction between the localized C2p spins and valenceband holes. Here, we investigated the incorporation site of C and the electrical properties of Cdoped ZnO films grown by using pulsed laser deposition (PLD) under oxygen-rich and oxygen-poor conditions. Contrary to the theoretical explanations, all the C-doped ZnO films exhibited n-type conductivity. Furthermore, most of the carbons were not incorporated at the O site, but rather at the interstitial or Zn site, or formed C clusters. Although there may exist a growth method that can lead to incorporation of C at the O site, our experimental results indicate that the defect-induced ferromagnetism mechanism can better explain most of the observed RTF in the PLD-grown ZnO:C films.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
