Abstract
We have investigated the effect of atomic hydrogen (H) irradiation on formation of IN(Ga)As quantum dots (QDs) by self-organizing process. For InGaAs QDs, the size of dots decreased from 40 to 20 nm by atomic H irradiation. The high density InGaAs QDs are formed uniformly by atomic H irradiation, while they are distributed mainly along the step edges without H irradiation. Atomic H also has beneficial effects on optical properties of QDs such as photoluminescence (PL) intensities and line widths. The waiting time dependence before GaAs cap layer deposition on the optical properties of QDs is also investigated. PL characteristics are improved in shorter waiting time.
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