Abstract

This study examined the ternary Ni2SnP layer in Sn‐3.5Ag/EN‐P solder joints by using in situ transmission electron microscopy (TEM). The TEM analyses confirmed that Sn from the solder diffused into the P‐rich Ni layer through the ternary Ni‐Sn‐P layer. However, Ni was neither detected in the solder region nor formed an additional Ni3Sn4 IMC layer at the interface between the solder and the ternary layer during the in situ annealing in the TEM. This suggests that the ternary Ni‐Sn‐P layer acts as a diffusion barrier to Ni during the aging process. Copyright © 2012 John Wiley & Sons, Ltd.

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