Abstract
Repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low- k films using a series of trimethylhalosilanes (trimethylchlorosilane-TMCS, trimethylbromosilane-TMBS, and trimethyliodosilane-TMIS) dissolved in supercritical CO 2 (scCO 2) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements. FTIR results showed that all trimethylhalosilanes reacted with silanol (SiO–H) groups in the fluid and on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films depositing trimethylsilyl –O–Si–(CH 3) 3 moieties. XPS results showed that no Br and I were detected after processing. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the series TMCS < TMBS < TMIS. These results indicate that the reactivity increased in the order TMCS < TMBS < TMIS, yet the dielectric constant was in the range of 2.56–2.60 within the limits of experimental error. One interpretation is that the increased thickness and contact angle were the result of self-condensation between trimethylsilanols in the fluid phase, which were formed by reaction of trimethylhalosilanes and water molecules. The dimers produced were strongly physisorbed to the p-MSQ film after processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
