The Response of Bean Plants to UV-B Radiation Under Different Irradiances of Background Visible Light

Abstract

Plants of Phaseolus vulgaris L. (cv. Stella) were grown in controlled conditions under three different irradiances of visible light with or without UV-B (280–320nm) radiation. The biologically effective UV-B radiation (UV-BBE) was 6.17 kJ m−2 d−1, and simulated a c. 5% decrease in stratospheric ozone at 55.7°N, 13.4°E. The photon flux densities of the photosynthetically active radiation (PAR, 400–700 nm) were either 700 μmol m−2−1 (HL), 500, μmol m−2 s−1 (ML) or 230 μmol m−2 s−1 PAR (LL). Under high light (HL) conditions plus UV-B radiation, bean plants appeared most resistant to the enhanced levels of UV-B radiation, and responded only by increasing leaf thickness by c. 18%. A small increase in UV screening pigments was also observed. Both the lower irradiances (ML and LL) increased the sensitivity of the plants to UV-B radiation. Changes in leaf structure were also observed. Photosystem II was inhibited under ML and LL together with UV-B radiation, as determined by Chi fluorescence induction and calculation of the fluorescence half-rise times. Leaf reflectivity measurements showed that the amount of PAR able to penetrate leaves of UV-B treated plants was reduced, and that a possible correlation may exist between the reduced PAR levels, loss of Chi and lowered photosynthetic activity, especially for LL +UV-B grown plants, where surface reflection from leaves was highest. Changes in leaf chlorophyll content were mostly confined to plants grown under LL + UV-B, where a decrease of c. 20% was found. With regard to protective pigments (the carotenoids and UV screening pigments) plants subjected to different visible light conditions responded differently. Among the growth parameters measured, there was a substantial decrease in leaf area, particularly under LL + UV-B (c. 47% relative to controls), where leaf dry weight was also reduced by c. 25%.