Abstract
Neutron-transmutation doping of silicon stimulates to a high degree the production of high resistivity n-type silicon, adjustable in the resistivity range of rho n=1...100 k Omega cm. Theoretical analysis of the resistivity inhomogeneities of neutron-transmutation doped silicon (NTD-Si) and the maximum possible mean resistivity as a function of the electrical parameters of the p-type Si starting material is presented. Theoretical and experimental results are compared in the resistivity range rho n=2-50 k Omega cm.
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