Abstract
This study investigated the conduction properties of sputtered ZrO2 exhibiting reversible and stable resistance change. Similar current distributions in on/off conduction and set/reset switching were observed in top electrodes with a diameter of 150, 250, and 350 µm. The size independence of current magnitude implied the presence of an uneven filamentary path over the electrode area. Increased current compliance was imposed on the turn-on process, and the observed increase in on-state current and turn-off threshold was attributed to incremental filament diameter. Variations in current conduction and resistance switching were analyzed by monitoring sweeping bias limits in both positive and negative polarities. These experimental observations were interpreted based on the aspect ratio of channels comprising conductive and oxidized filament portions, thereby elucidating the characteristics of filamentary resistive switching.
Highlights
Resistive random access memory (RRAM), which is a crucial class of nonvolatile memory, is an alternative to commercial floating-gate flash memory [1]
VSET and VRESET are of the same polarity for unipolar resistance switching (URS), whereas opposite polarities are required for bipolar resistive switching (BRS)
The deviceinunder test is of the metal-oxide-metal structure, describede.g., in materials, Section 3 by interpreted perspective of conductive filaments (CFs), as compared with those by preparingasconditions, Ti/ZrO
Summary
Resistive random access memory (RRAM), which is a crucial class of nonvolatile memory, is an alternative to commercial floating-gate flash memory [1]. ZrO2 resistive thin films exhibit long retention and superior endurance in the URS and BRS modes. Both homogeneous and filamentary types of switching have been proposed in literature. URS and BRS differ in resistance ratio and especially in the abrupt or gradual transition to the HRS [13,14], which implies a specific reset mechanism to be involved in the CF rupture process. Materials 2016, 9, 551 for controlling RRAM switching operations and enhancing conduction reliability. The conduction and9,switching dispersions in ZrO2 devices were examined by applying various of current. Guidelines for controlling RRAM switching operations and enhancing conduction reliability. The and switching dispersions in ZrO2 devices were examined by applying various
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