Abstract
The effect of active and passive power modes on the resistance of the LEDs (LEDs) made of multilayer AlGaAs heterostructures to gamma-quantum irradiation was studied. Three characteristic stages of emission power reduction during irradiation are distinguished for the studied LEDs irrespective of the power supply mode. When irradiating LEDs in the active power supply mode, two differently directed processes of changes in the emission power are observed. The assumption is made that the first process is caused by a decrease in the LED emission power due to the injection of appropriate radiation defects. The second process is caused by a partial recovery of the emission power due to radiation, radiation-thermal, and/or electrostimulated annealing of some of the defects created. The observed recovery of the emission power in the active power mode of the LED during irradiation significantly increases its resistance to gamma-ray irradiation.
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