Abstract
A theory of evaporated overlayer growth is developed which assumes an exponential relationship between mean overlayer thickness and the fraction of total area covered. The electron scattering parameter at the surface is assigned a fixed value Q 1 for the exposed areas of the annealed film and Q 2 = O for the nucleating island regions. The variation of resistance during overlayer nucleation predicted by this theory is shown to be in reasonable agreement with available experimental data. The applicability of this theory at the onset of nucleation is briefly considered in relation to a few measurements which have been made by electron microscopy.
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