Abstract
An active frequency selective surface (FSS) is designed, and is combined with Radar Absorbing Materials to form a composite absorbing structure. Based on the equivalent theory that the PIN diode can be regarded as resistance, the voltage-loading resistance of active FSS element is researched for RAM containing FSS, and the electromagnetic wave reflectivity performance is analyzed. The influence of active FSS design parameters on the reflectivity of RAM is researched, and the FSS design parameters include the voltage-loading manner, the resistance parameter, and the position in the RAM. The research result shows that the resonance frequency of RAM containing FSS can be dynamically adjusted from 3GHz to 4GHz by changing voltage-loading resistance of active FSS, and the reflectivity can be reduced from -13dB to -35dB.
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