Abstract
Nowdays HVDC technology is developing very fast. As the core component of HVDC technology, high-voltage DC circuit breaker has got much attention. High-voltage DC circuit breaker consists of series of semiconductors. In this paper, Researches of transient voltage imbalance mechanism of connected MOSFETS is done The effects of parasitic parameters on the switching characteristics of the MOSFET is analyzed. The dynamic and static voltage imbalance mechanism from two aspects is analyzed. The theoretical basis for the design of the high-voltage DC circuit breaker and the design of equalizing circuits is proposed. A high frequency carrier isolation driver strategy is proposed and a pulse control circuit, drive circuit is designed which implements to provides a controlled drive signal to connected-MOSFETS. In the end, a DC circuit breaker is designed, and the feasibility of the design is verified by the analysis of the experimental waveforms.
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