The Research of β-SiCp/Al Electronic Packaging Composites Fabricated by Pressureless Infiltrating

Abstract

The β-SiCp/Al electronic packaging composites with excellent performance were successfully fabricated by pressureless infiltration technology in air.The effects of alloying elements, infiltration temperature and time on infiltration process and application of -SiC were studied.The results show that by adding appropriate magnesium to aluminum matrix, a interface reaction between oxide films of SiC and magnesium occurs, and the interface reaction product MgAl2O4 is generated, the interface wettability of Al and SiC and pressureless infiltration are improved.The interface harmful phase Al4C3 can be inhibited by adding silicon to aluminum matrix.Identified 850°C for the best infiltration temperature, and the thickness with infiltration time and larger, infiltration rate is about 10mm/hour.Under the same parameter conditions, the thermal properties of β-SiCp/Al electronic packaging material are 4 ~ 6% higher than that of ɑ-SiCp/Al. The β-SiCp/Al electronic packaging materials with 66% SiC volume ratio has lower coefficiency of thermal expansion than those ɑ-SiCp/Al electronic packaging materials.And the thermal expansion coefficient and thermal conductivity of β-SiCp/Al electronic material can satisfy the requirements for electronic packaging materials.