Abstract
A wafer level dielectric breakdown reliability measurement technique using logarithmically stepped‐up stress current density is proposed, and the effectiveness of this technique is demonstrated. The stepped current time‐dependent dielectric breakdown (SCTDDB) measurement starts at a very low stress current density , and it steps up logarithmically to a maximum stress current density until oxide breakdown occurs. The SCTDDB measurement has high detection sensitivity for defect‐related breakdown, a wide dynamic range , adequate measurement time (within ), and data compatibility with conventional constant current TDDB result. The SCTDDB technique is a very simple and powerful evaluation tool for thin silicon dioxide reliability analysis.
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