The regulation of resistivity for SiHfBCN thin films prepared by magnetron sputtering method

Abstract

SiHfBCN ceramic is a kind of potential thin film electrode material applied in high temperature sensors. The ability to tune the resistivity is of primary importance for its further applications. Therefore, in this paper, the SiHfBCN film was prepared using magnetron sputtering method. The regulation means of resistivity were investigated through analyzing the relationship between microstructure and resistivity. The result shows that the resistivity of amorphous SiHfBCN film is mainly related to the overall electronegativity difference and contents of insulating chemical bonds. The resistivity of SiHfBCN films can be controlled over a broad range by changing their composition. In addition, the behavior of annealed SiHfBCN indicates a stable structure. • The SiHfBCN film, a potential high temperature electrode material, was prepared by magnetron sputtering method. • The relationship between resistivity and microstructure of SiHfBCN film was established to explain its conductive behavior. • The resistivity of SiHfBCN film is related to the “insulating” chemical bonds and overall electronegativity difference.