Abstract
The two electron reduction of oxygen at illuminated p-GaAs is shown to occur at low light intensities via a current doubling route that involves hole injection by the HO . 2 intermediate. At high light intensities, electron capture from the conduction band predominates and the current doubling effect is no longer evident. Analysis of the experimental data using a simple reaction scheme suggests that the hole injection step is thermally activated with a first order rate constant of about 10 5 s −1. The results are compared with previous measurements made with p-GaaP electrodes.
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