The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell

Abstract

Multiple exciton generation solar cell based on quantum dots has higher theoretical efficiency than single exciton generation solar cell. In this work, Si quantum dots with the diameter of 10nm were fabricated by the multi-hollow discharge plasma chemical vapor deposition and applied to the quantum dot-sensitized solar cell. In this cell, there was considerable electron recombination with redox electrolyte in the Si–TiO2 network because of large Si particle size. For the reduction of recombination and the enhancement of performance, a barrier layer was introduced. Zinc nitrate hexahydrate (Zn(NO3)2·6H2O) and zinc acetate dihydrate (Zn(CH3COO)2·H2O) were employed as precursors for surface modification. Consequently, short circuit current and open circuit voltage of the cells were increased by the surface modification with both precursors. The improvement was ascribed to the inhibition of electrons back transfer from TiO2 to the electrolyte by the barrier layer. This result clearly demonstrated that the surface modification with ZnO was advantageous for the performance enhancement.