Abstract
The mechanism of diffusion, stimulated by the formation of radiation defects, anomalous diffusion of boron into silicon carbide from the vapor phase, is described based on the two-component model of interaction of the impurity with own defects. The model of the anisotropic shift of the implanted impurity, namely, the diffusion concentration equation of the impurity containing the application describing the drift, stimulated by vacancies, is proposed to explain the experimental data. It is shown that the coefficient of vacancy diffusion does not depend either on the direction – on the surface or on it, or on the method of annealing – thermal or photonic.
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