Abstract
To determine the dependence of capture cross sections of recombination centers on carrier speed, it is desirable to vary the average speed of the carriers while keeping lattice temperature constant. These conditions, plus the advantage of negligible sweepout of excess carriers by the field, can be obtained in high mobility semiconductors by applying short pulses of high microwave field. The kinetics of recombination in such high fields are investigated along the lines used by S hockley and R ead for low fields. A relation between the change of carrier concentration in microwave field and the speed-dependence of the cross sections is obtained. This relation has been used to determine the speed-dependence of the cross section for electron capture of negatively charged copper centers in germanium, and the result is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
