The reactive adsorption of CCl 4 on GaAs(100) surfaces at 300 K

Abstract

Auger electron spectroscopy has been used to monitor the adsorption of CCl 4 on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 10 14 and (2.0 ± 0.2) × 10 14 cm −2 are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.