Abstract
In the effective mass approximation in the two-band model of semiconductor the dipole moment matrix element due to the biexciton-exciton transition is expressed by the functional of the exciton and biexciton envelopes. In comparison to previous estimations of the biexciton-exciton transition probability the detailed band structure at band extrema was taken into account and the biexciton envelope optimized by variational calculation was used in calculations. The oscillator strength ratio I 2 = fbiex-ex/fband— to -band s given for several values of σ = me/mh. The calculated functional I for CdS . is about four times smaller compared to that obtained by Hanamura. The calculated giant oscillator strength of the biexciton-exciton recombination in CdS is fbiex—ex = 4 x 102 .
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