Abstract
Capacitance–voltage (C–V) characteristics of the as-grown metal(Al)–carbon–oxide(SiO2)–semiconductor(Si) structures are examined at the frequency of 1 MHz and compared with the C–V characteristics of the conventional metal(Al)–SiO2–Si (MOS) structures. The density of the oxide charge Qo/q is extracted from the experimental results. Qo/q was found to be 1×1012cm−2 for the MOS structures and 7×1011cm−2 for the metal–carbon–oxide–silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers.
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