Abstract
A study of the photoluminescence characteristics of a ZnO single crystal at the temperature range 173–823 K is presented. The analysis employed the electron-phonon interaction model as well as the radiative recombination rate model. Both studies indicate that at ∼700 K the photoluminescence character undergoes a transition from being a free exciton emission to a band gap recombination, implying a breakup of excitons into free carriers is occurring. The transition temperature corresponds to ∼60 meV, which is consistent with the binding energy of the free exciton in ZnO.
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