The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

Abstract

Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency (RF) magnetron sputtering at ambient temperature. The MoO3 content in the target varies from 0 to 5 wt%, and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis. The resistivity first decreases and then increases with the increase in MoO3 content. The lowest resistivity achieved is 9.2×10−4 Ω·cm, with a high Hall mobility of 30 cm2·V−1·s1 and a carrier concentration of 2.3×1020cm−3 at an MoO3 content of 2 wt%. The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.