Abstract
Titanium nitride films were deposited on steel and silicon substrates using a filtered arc evaporation process. The microhardness, crystallite size, residual stress, adhesion, surface roughness and crystallographic orientation of the films were studied as a function of substrate bias over the range 0 to -400 V. The mechanical and structural properties were found to depend upon the degree of substrate bias. The spectral reflectance in the region between 250 and 2500 nm was measured and compared with Kr + ion-assisted deposited TiN films. In addition, the electrical resistivity and the superconducting transition temperature of the filtered arc deposited TiN films were measured to be 20 μΩ cm and 4.3 K respectively.
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