Abstract
Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (002) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200°C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.
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