Abstract
AbstractPositive charging amorphous silicon alloy photoreceptors require intentionally fabricated electron blocking layers at the photoreceptor/substrate interface. Thin insulating films and lightly boron doped (300ppm) a-Si alloy layers have been previously employed either singly or in multilayers as back blocking layers. We report here, for the first time, the use of thin (≈300Å) heavily doped microcrystalline (≈10 Ω−1 cm−1) Si back blocking layers [1], with enhanced photoreceptor performance. Investigation of the temperature and electric field dependence of the dark decay of photoreceptors with amorphous or microcrystalline silicon back blocking layers as a function of blocking layer thickness and boron doping is interpreted within a comprehensive model of blocking layer operation.
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