Abstract
An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm−1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LVM), respectively. After annealing, the intensity ratio between the LVM and E2(high) mode, i.e., ILVM/IE2(high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.
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