Abstract

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.