Abstract
Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The X-ray diffraction analysis on CaF 2/glass illustrated (2 2 0) preferential orientation and showed lattice mismatch less than 5% with Si. We achieved a fluoride film with breakdown electric field higher than 1.27 MV/cm, leakage current density less than 10 −8 A/cm 2, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300 °C by using a CaF 2/glass substrate. The μc-Si films exhibited crystallization in (1 1 1) and (2 2 0) planes, grain size of 700 Å, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4×10 −7 S/cm.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
