Abstract
The present paper is the first description on the electrical and thermoelectric properties of amorphous PVD B 12Sb 2 films prepared using the reaction of decaborane gas with evaporated antimony gas on Si (1900 Å) / SiO x (3700 Å) / Si (100) (625 μm) substrate at the temperature 350°C. Ohmic metals contacts of the film were examined by making evaporated Al, followed by annealing at 200°C. The comparatively high mobility of ∼100 cm 2/V s and high thermoelectric figures-of-merit of ∼10 −4/K were confirmed.
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