Abstract
p-GaInAs lattice matched to (100) InP was grown and implanted with selenium ions at room temperature. The dose was in the range of 5 × 10 13 to 5 × 10 15 ions cm −2 at an energy of 400 keV. The results of secondary ion mass spectroscopy indicate that for short anneals of 30 s at 800°C, very little dopant redistribution takes place. However, for longer time anneals of 900 s at 800°C a significant outdiffusion and loss of selenium is observed. Electron concentrations in the range of 10 18 to 10 19 cm −3 with corresponding Hall mobilities of 1800 to 1200 cm 2 V −1 s −1 were measured, the lowest sheet resistivity being 12 Ω/□. Transmission electron microscopy results indicate that good crystallinity in the implanted material is restored after short time anneals, but the long time anneals introduce damage within the implanted region.
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